About ten years ago, the first SiC MOSFETs became commercially available and in the meantime, SiC devices have conquered a considerable market share. On the one hand, the economy of scale brings down prices and SiC devices become viable for more and more applications, also demanding more diverse devices, packages and topologies. On the other hand, it is now the time of optimising the devices, achieving higher performance and reliability as well as higher power density. The panel will discuss current trends and prospects and what to expect from future SiC devices.

Moderator:      Prof. Dr. Nando KAMINSKI

Panelists:    

• Peter FRIEDRICHS (Infineon)
• Nils SOLTAU (Mitsubishi Electric)
• Aly MASHALY (Rohm)
• Pietro SCALIA (onsemi)
• Guy MOXEY (Wolfspeed)
• Manuel GÄRTNER (STMicroelectronics)

• Mark ROELOFFZEN (Nexperia)