The lateral HEMT single switch has become synonymous for GaN power devices and has achieved remarkable maturity within an astonishingly short period of time. However, there are several other development directions, which might attract more attention in the future. One is the integration of the gate unit and even logic into a GaN device. Another is integration of a full topology like a six pack in one chip. A third is making vertical devices, possibly a trench MISFET. And of course, people look into cascodes and other control schemes. Which of these directions will become big and which will rather serve their respective niches, while the lateral HEMT single switch shows progress and remains the “top dog”? The panel will discuss current trends and prospects and what to expect from future GaN devices.

Moderator: Prof. Dr. Nando KAMINSKI

Panelists:

• Gerald DEBOY (Infineon)
• Dan KINZER (Navitas)
• Dilder CHOWDHURY (Nexperia)
• Cam PHAN (GaN Systems)
• Ran SOFFER (VisIC)

• Jan ŠONSKÝ (Innoscience)